IRFU9020PBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 50V 9.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc)
Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V
Power Dissipation (Max): 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 6+ | 3.38 EUR |
| 75+ | 1.51 EUR |
| 150+ | 1.36 EUR |
| 525+ | 1.19 EUR |
| 1050+ | 1.15 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details IRFU9020PBF Vishay Siliconix
Description: MOSFET P-CH 50V 9.9A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 9.9A (Tc), Rds On (Max) @ Id, Vgs: 280mOhm @ 5.7A, 10V, Power Dissipation (Max): 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 50 V, Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRFU9020PBF nach Preis ab 1.2 EUR bis 4.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
|
IRFU9020PBF | Hersteller : Vishay Semiconductors |
MOSFETs P-Chan 60V 8.8 Amp |
auf Bestellung 2223 Stücke: Lieferzeit 10-14 Tag (e) |
|
