IRFU9120PBF Vishay Siliconix
Hersteller: Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V
Power Dissipation (Max): 2.5W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V
| Anzahl | Preis |
|---|---|
| 10+ | 1.92 EUR |
| 75+ | 1.19 EUR |
| 150+ | 1.15 EUR |
| 525+ | 1.13 EUR |
| 1050+ | 1.08 EUR |
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Technische Details IRFU9120PBF Vishay Siliconix
Description: MOSFET P-CH 100V 5.6A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc), Rds On (Max) @ Id, Vgs: 600mOhm @ 3.4A, 10V, Power Dissipation (Max): 2.5W (Ta), 42W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 390 pF @ 25 V.
Weitere Produktangebote IRFU9120PBF nach Preis ab 0.93 EUR bis 2.73 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
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IRFU9120PBF | VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; IPAK,TO251 Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -100V Drain current: -3.6A Power dissipation: 42W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 0.6Ω Mounting: THT Gate charge: 18nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 1444 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU9120PBF | Vishay |
Trans MOSFET P-CH 100V 5.6A 3-Pin(3+Tab) IPAK |
auf Bestellung 1444 Stücke: Lieferzeit 14-21 Tag (e) |
|
| IRFU9120PBF |
|
Hersteller: VISHAY
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -100V; -3.6A; 42W; IPAK,TO251
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -100V
Drain current: -3.6A
Power dissipation: 42W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance: 0.6Ω
Mounting: THT
Gate charge: 18nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 1444 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 27+ | 2.72 EUR |
| 49+ | 1.49 EUR |
| 56+ | 1.29 EUR |
| 75+ | 1.23 EUR |
| 150+ | 1.16 EUR |
| 375+ | 1.04 EUR |
| 1050+ | 0.93 EUR |
| IRFU9120PBF |
|
Hersteller: Vishay
Trans MOSFET P-CH 100V 5.6A 3-Pin(3+Tab) IPAK
Trans MOSFET P-CH 100V 5.6A 3-Pin(3+Tab) IPAK
auf Bestellung 1444 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 54+ | 2.73 EUR |
| 68+ | 2.14 EUR |
| 84+ | 1.7 EUR |
| 150+ | 1.5 EUR |
| 375+ | 1.32 EUR |
| 1050+ | 1.13 EUR |