auf Bestellung 2998 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 87+ | 1.81 EUR |
| 105+ | 1.44 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 0.99 EUR |
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Technische Details IRFU9210PBF Vishay
Description: MOSFET P-CH 200V 1.9A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFU9210PBF nach Preis ab 0.95 EUR bis 2.66 EUR
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IRFU9210PBF | Hersteller : Vishay |
 Trans MOSFET P-CH 200V 1.9A 3-Pin(3+Tab) IPAK |
auf Bestellung 2998 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFU9210PBF | Hersteller : Vishay Siliconix |
Description: MOSFET P-CH 200V 1.9A TO251AA Packaging: Tube Package / Case: TO-251-3 Short Leads, IPak, TO-251AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc) Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V Power Dissipation (Max): 2.5W (Ta), 25W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-251AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V |
auf Bestellung 2711 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFU9210PBF | Hersteller : Vishay |
Trans MOSFET P-CH 200V 1.9A 3-Pin(3+Tab) IPAK |
Produkt ist nicht verfügbar |
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| IRFU9210PBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.9A Pulsed drain current: -7.6A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFU9210PBF | Hersteller : Vishay Semiconductors |
MOSFET P-Chan 200V 1.9 Amp |
Produkt ist nicht verfügbar |
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| IRFU9210PBF | Hersteller : VISHAY |
Category: THT P channel transistors Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.9A Pulsed drain current: -7.6A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of package: tube Kind of channel: enhanced |
Produkt ist nicht verfügbar |