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IRFU9210PBF

IRFU9210PBF Vishay Siliconix


sihfr921.pdf Hersteller: Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2308 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.71 EUR
10+2.39 EUR
100+1.63 EUR
500+1.30 EUR
1000+1.20 EUR
Mindestbestellmenge: 5
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Technische Details IRFU9210PBF Vishay Siliconix

Description: MOSFET P-CH 200V 1.9A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.

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IRFU9210PBF IRFU9210PBF Hersteller : Vishay sihfr921.pdf Trans MOSFET P-CH 200V 1.9A 3-Pin(3+Tab) IPAK
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IRFU9210PBF IRFU9210PBF Hersteller : Vishay 91281.pdf Trans MOSFET P-CH 200V 1.9A 3-Pin(3+Tab) IPAK
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IRFU9210PBF Hersteller : VISHAY sihfr921.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 8.9nC
Kind of package: tube
Kind of channel: enhancement
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
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IRFU9210PBF IRFU9210PBF Hersteller : Vishay Semiconductors sihfr921.pdf MOSFETs P-Chan 200V 1.9 Amp
Produkt ist nicht verfügbar
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IRFU9210PBF Hersteller : VISHAY sihfr921.pdf Category: THT P channel transistors
Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W
Type of transistor: P-MOSFET
Polarisation: unipolar
Drain-source voltage: -200V
Drain current: -1.9A
Pulsed drain current: -7.6A
Power dissipation: 25W
Case: IPAK; TO251
Gate-source voltage: ±20V
On-state resistance:
Mounting: THT
Gate charge: 8.9nC
Kind of package: tube
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH