
IRFU9210PBF Vishay Siliconix

Description: MOSFET P-CH 200V 1.9A TO251AA
Packaging: Tube
Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-251AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V
auf Bestellung 2308 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis |
---|---|
5+ | 3.71 EUR |
10+ | 2.39 EUR |
100+ | 1.63 EUR |
500+ | 1.30 EUR |
1000+ | 1.20 EUR |
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Technische Details IRFU9210PBF Vishay Siliconix
Description: MOSFET P-CH 200V 1.9A TO251AA, Packaging: Tube, Package / Case: TO-251-3 Short Leads, IPak, TO-251AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc), Rds On (Max) @ Id, Vgs: 3Ohm @ 1.1A, 10V, Power Dissipation (Max): 2.5W (Ta), 25W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-251AA, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 8.9 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 170 pF @ 25 V.
Weitere Produktangebote IRFU9210PBF
Foto | Bezeichnung | Hersteller | Beschreibung |
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IRFU9210PBF | Hersteller : Vishay |
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IRFU9210PBF | Hersteller : Vishay |
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Produkt ist nicht verfügbar |
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IRFU9210PBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.9A Pulsed drain current: -7.6A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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IRFU9210PBF | Hersteller : Vishay Semiconductors |
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Produkt ist nicht verfügbar |
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IRFU9210PBF | Hersteller : VISHAY |
![]() Description: Transistor: P-MOSFET; unipolar; -200V; -1.9A; Idm: -7.6A; 25W Type of transistor: P-MOSFET Polarisation: unipolar Drain-source voltage: -200V Drain current: -1.9A Pulsed drain current: -7.6A Power dissipation: 25W Case: IPAK; TO251 Gate-source voltage: ±20V On-state resistance: 3Ω Mounting: THT Gate charge: 8.9nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |