IRFZ24PBF VISHAY
Hersteller: VISHAYCategory: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 980 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 49+ | 1.47 EUR |
| 53+ | 1.36 EUR |
| 123+ | 0.58 EUR |
| 130+ | 0.55 EUR |
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Technische Details IRFZ24PBF VISHAY
Description: MOSFET N-CH 60V 17A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V, Power Dissipation (Max): 60W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V.
Weitere Produktangebote IRFZ24PBF nach Preis ab 0.55 EUR bis 3.8 EUR
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IRFZ24PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 980 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ24PBF | Hersteller : Vishay Semiconductors |
MOSFET 60V N-CH HEXFET MOSFET |
auf Bestellung 729 Stücke: Lieferzeit 14-28 Tag (e) |
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IRFZ24PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
auf Bestellung 309 Stücke: Lieferzeit 21-28 Tag (e) |
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IRFZ24PBF Produktcode: 115082 |
Transistoren > MOSFET N-CH |
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IRFZ24PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB |
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IRFZ24PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFZ24PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |