Technische Details IRFZ24PBF
- MOSFET
- Transistor Type:MOSFET
- Transistor Polarity:N Channel
- Drain Source Voltage, Vds:55V
- Continuous Drain Current, Id:17A
- Continuous Drain Current - 25 Deg C:17A
- Drain-Source Breakdown Voltage:55V
Weitere Produktangebote IRFZ24PBF nach Preis ab 0.75 EUR bis 3.94 EUR
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IRFZ24PBF | Hersteller : Vishay |
 Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ24PBF | Hersteller : VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ24PBF | Hersteller : Vishay Semiconductors |
MOSFETs TO220 N-CH 60V 17A |
auf Bestellung 6502 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ24PBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
auf Bestellung 1656 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ24PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRFZ24PBF | Hersteller : Vishay |
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |