Technische Details IRFZ24PBF
- MOSFET
- Transistor Type:MOSFET
- Transistor Polarity:N Channel
- Drain Source Voltage, Vds:55V
- Continuous Drain Current, Id:17A
- Continuous Drain Current - 25 Deg C:17A
- Drain-Source Breakdown Voltage:55V
Weitere Produktangebote IRFZ24PBF nach Preis ab 0.9 EUR bis 6.34 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||
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IRFZ24PBF | Vishay |
  Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ24PBF | VISHAY |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 17A Pulsed drain current: 68A Power dissipation: 60W Case: TO220AB Gate-source voltage: ±20V On-state resistance: 0.1Ω Mounting: THT Gate charge: 25nC Kind of package: tube Kind of channel: enhancement |
auf Bestellung 461 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ24PBF | Vishay Semiconductors |
MOSFETs TO220 N-CH 60V 17A |
auf Bestellung 6487 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ24PBF | VISHAY |
Description: VISHAY - IRFZ24PBF - Leistungs-MOSFET, n-Kanal, 55 V, 17 A, 0.1 ohm, TO-220AB, Durchsteckmontage tariffCode: 85412900 Transistormontage: Durchsteckmontage euEccn: NLR Drain-Source-Spannung Vds: 55V rohsCompliant: Y-EX Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Gate-Source-Schwellenspannung, max.: 4V Verlustleistung: 60W SVHC: Lead (04-Feb-2026) Bauform - Transistor: TO-220AB Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code usEccn: EAR99 Kanaltyp: n-Kanal Betriebstemperatur, max.: 175°C Rds(on)-Prüfspannung: 10V Drain-Source-Durchgangswiderstand: 0.1ohm |
auf Bestellung 900 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ24PBF | Vishay Siliconix |
Description: MOSFET N-CH 60V 17A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Tc) Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V Power Dissipation (Max): 60W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V |
auf Bestellung 1549 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRFZ24PBF |
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Hersteller: Vishay
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB
Trans MOSFET N-CH 60V 17A 3-Pin(3+Tab) TO-220AB
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 82+ | 2.15 EUR |
| 100+ | 1.96 EUR |
| 250+ | 1.67 EUR |
| IRFZ24PBF |
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Hersteller: VISHAY
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
Category: THT N channel transistors
Description: Transistor: N-MOSFET; unipolar; 60V; 17A; Idm: 68A; 60W; TO220AB
Type of transistor: N-MOSFET
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 17A
Pulsed drain current: 68A
Power dissipation: 60W
Case: TO220AB
Gate-source voltage: ±20V
On-state resistance: 0.1Ω
Mounting: THT
Gate charge: 25nC
Kind of package: tube
Kind of channel: enhancement
auf Bestellung 461 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 33+ | 2.62 EUR |
| 73+ | 1.17 EUR |
| 83+ | 1.04 EUR |
| 100+ | 0.98 EUR |
| 250+ | 0.9 EUR |
| IRFZ24PBF |
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Hersteller: Vishay Semiconductors
MOSFETs TO220 N-CH 60V 17A
MOSFETs TO220 N-CH 60V 17A
auf Bestellung 6487 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.86 EUR |
| 10+ | 2.14 EUR |
| 100+ | 1.64 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.19 EUR |
| 2000+ | 1.07 EUR |
| IRFZ24PBF |
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Hersteller: VISHAY
Description: VISHAY - IRFZ24PBF - Leistungs-MOSFET, n-Kanal, 55 V, 17 A, 0.1 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 60W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.1ohm
Description: VISHAY - IRFZ24PBF - Leistungs-MOSFET, n-Kanal, 55 V, 17 A, 0.1 ohm, TO-220AB, Durchsteckmontage
tariffCode: 85412900
Transistormontage: Durchsteckmontage
euEccn: NLR
Drain-Source-Spannung Vds: 55V
rohsCompliant: Y-EX
Dauer-Drainstrom Id: 17A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Gate-Source-Schwellenspannung, max.: 4V
Verlustleistung: 60W
SVHC: Lead (04-Feb-2026)
Bauform - Transistor: TO-220AB
Anzahl der Pins: 3Pin(s)
Produktpalette: -
productTraceability: Yes-Date/Lot Code
usEccn: EAR99
Kanaltyp: n-Kanal
Betriebstemperatur, max.: 175°C
Rds(on)-Prüfspannung: 10V
Drain-Source-Durchgangswiderstand: 0.1ohm
auf Bestellung 900 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 55+ | 4.59 EUR |
| 109+ | 2.13 EUR |
| 135+ | 1.59 EUR |
| 500+ | 1.3 EUR |
| IRFZ24PBF |
|
Hersteller: Vishay Siliconix
Description: MOSFET N-CH 60V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
Description: MOSFET N-CH 60V 17A TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 10A, 10V
Power Dissipation (Max): 60W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220AB
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 640 pF @ 25 V
auf Bestellung 1549 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.34 EUR |
| 50+ | 3.18 EUR |
| 100+ | 2.87 EUR |
| 500+ | 2.32 EUR |
| 1000+ | 2.15 EUR |