Technische Details IRFZ44ESPBF
- MOSFET
- Transistor Type:MOSFET
- Transist
- Transistor Type:MOSFET
- Transistor Polarity:N
- Typ Voltage Vds:60V
- Cont Current Id:48A
- On State Resistance:0.023ohm
- Voltage Vgs Rds on Measurement:10V
- Typ Voltage Vgs th:4V
- Case Style:D2-PAK
- Termination Type:SMD
- Alternate Case Style:D2-PAK
- Junction to Case Thermal Resistance A:1.4`C/W
- Max Voltage Vds:60V
- Max Voltage Vgs th:4V
- On State resistance @ Vgs = 10V:0.023ohm
- Power Dissipation:110W
- Power Dissipation Pd:110W
- Pulse Current Idm:192A
- Voltage Vds:60V
- Transistor Case Style:D2-PAK
Weitere Produktangebote IRFZ44ESPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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IRFZ44ESPBF | Hersteller : Infineon Technologies |
 Description: MOSFET N-CH 60V 48A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 48A (Tc) Rds On (Max) @ Id, Vgs: 23mOhm @ 29A, 10V Power Dissipation (Max): 110W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1360 pF @ 25 V |
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