IRFZ44NLPBF Infineon Technologies
auf Bestellung 400 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 170+ | 0.92 EUR |
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Technische Details IRFZ44NLPBF Infineon Technologies
Description: MOSFET N-CH 55V 49A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V, Power Dissipation (Max): 3.8W (Ta), 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V.
Weitere Produktangebote IRFZ44NLPBF nach Preis ab 0.68 EUR bis 1.49 EUR
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IRFZ44NLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 400 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44NLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 14093 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44NLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 14093 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44NLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 110W Case: TO262 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 91 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ44NLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 49A; 110W; TO262 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 55V Drain current: 49A Power dissipation: 110W Case: TO262 Gate-source voltage: ±20V On-state resistance: 17.5mΩ Mounting: THT Gate charge: 42nC Kind of package: tube Kind of channel: enhanced |
auf Bestellung 91 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44NLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 55V 49A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 4 Stücke: Lieferzeit 14-21 Tag (e) |
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| IRFZ44NLPBF | Hersteller : IR |
Транз. Пол. БМ N-HEXFET TO262 Udss=55V; Id=49A; Pdmax=110W; Rds=0,022 Ohm |
auf Bestellung 157 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ44NLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 49A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
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