IRFZ44NLPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 382+ | 1.4 EUR |
| 500+ | 1.22 EUR |
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Technische Details IRFZ44NLPBF Infineon Technologies
Description: MOSFET N-CH 55V 49A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 49A (Tc), Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V, Power Dissipation (Max): 3.8W (Ta), 94W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V.
Weitere Produktangebote IRFZ44NLPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
| IRFZ44NLPBF | Hersteller : International Rectifier |
 N-Channel, 55V, 49A, TO-262 Група товару: Транзистори Од. вим: шт |
Produkt ist nicht verfügbar |
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| IRFZ44NLPBF | Hersteller : International Rectifier/Infineon |
N-канальний ПТ, Udss, В = 55, Id = 49 А, Ptot, Вт = 3,8, Тип монт. = вивідний, Ciss, пФ @ Uds, В = 1470 @ 25, Qg, нКл = 63 @ 10 В, Rds = 17.5 мОм @ 25 A, 10 В, Tексп, °C = -55...+175, Ugs(th) = 4 В @ 250 мкА,... Група товару: Транзистори Корпус: I2PAK Од. Anzahl je Verpackung: 50 Stücke |
Produkt ist nicht verfügbar |
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IRFZ44NLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 49A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 49A (Tc) Rds On (Max) @ Id, Vgs: 17.5mOhm @ 25A, 10V Power Dissipation (Max): 3.8W (Ta), 94W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1470 pF @ 25 V |
Produkt ist nicht verfügbar |