IRFZ46NLPBF Infineon Technologies
auf Bestellung 1000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 394+ | 1.41 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.09 EUR |
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Technische Details IRFZ46NLPBF Infineon Technologies
Description: MOSFET N-CH 55V 53A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 53A (Tc), Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V, Power Dissipation (Max): 3.8W (Ta), 107W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-262, Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V.
Weitere Produktangebote IRFZ46NLPBF nach Preis ab 1.00 EUR bis 3.40 EUR
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IRFZ46NLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 53A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 1226 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NLPBF | Hersteller : Infineon Technologies |
MOSFETs MOSFT 55V 53A 16.5mOhm 48nC |
auf Bestellung 762 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ46NLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhancement Technology: HEXFET® Anzahl je Verpackung: 1 Stücke |
auf Bestellung 21 Stücke: Lieferzeit 7-14 Tag (e) |
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IRFZ46NLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: THT N channel transistors Description: Transistor: N-MOSFET; unipolar; 55V; 53A; 120W; TO262 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 55V Drain current: 53A Power dissipation: 120W Case: TO262 Gate-source voltage: ±20V On-state resistance: 16.5mΩ Mounting: THT Gate charge: 48nC Kind of channel: enhancement Technology: HEXFET® |
auf Bestellung 21 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 53A 3-Pin(3+Tab) TO-262 Tube |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46NLPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRFZ46NLPBF - IRFZ46 - 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 euEccn: NLR hazardous: false rohsCompliant: YES productTraceability: No rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
Produkt ist nicht verfügbar |
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IRFZ46NLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 53A TO262 Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 53A (Tc) Rds On (Max) @ Id, Vgs: 16.5mOhm @ 28A, 10V Power Dissipation (Max): 3.8W (Ta), 107W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 72 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1696 pF @ 25 V |
Produkt ist nicht verfügbar |