IRFZ46ZSTRLPBF Infineon Technologies
auf Bestellung 3200 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 0.81 EUR |
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Technische Details IRFZ46ZSTRLPBF Infineon Technologies
Description: IRFZ46 - 12V-300V N-CHANNEL POWE, Packaging: Bulk, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 51A (Tc), Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V, Power Dissipation (Max): 82W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: D2PAK, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V.
Weitere Produktangebote IRFZ46ZSTRLPBF nach Preis ab 0.81 EUR bis 2.83 EUR
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IRFZ46ZSTRLPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 55V 51A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46ZSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 51A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 12800 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46ZSTRLPBF | Hersteller : International Rectifier |
Description: IRFZ46 - 12V-300V N-CHANNEL POWE Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V |
auf Bestellung 68376 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ46ZSTRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 51A D2PAK Packaging: Bulk Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V |
auf Bestellung 6080 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ46ZSTRLPBF | Hersteller : Infineon Technologies |
MOSFET MOSFT 55V 51A 13.6mOhm 31nC |
auf Bestellung 880 Stücke: Lieferzeit 10-14 Tag (e) |
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IRFZ46ZSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 51A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 3200 Stücke: Lieferzeit 14-21 Tag (e) |
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IRFZ46ZSTRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 55V 51A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRFZ46ZSTRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 55V 51A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 13.6mOhm @ 31A, 10V Power Dissipation (Max): 82W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1460 pF @ 25 V |
Produkt ist nicht verfügbar |