IRG4BC10SD-LPBF International Rectifier
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Technische Details IRG4BC10SD-LPBF International Rectifier
Description: IGBT 600V 14A 38W TO262, Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A, Reverse Recovery Time (trr): 28 ns, Input Type: Standard, Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Through Hole, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Packaging: Tube, Power - Max: 38 W, Current - Collector Pulsed (Icm): 18 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 14 A, Part Status: Obsolete, Gate Charge: 15 nC, Test Condition: 480V, 8A, 100Ohm, 15V, Switching Energy: 310µJ (on), 3.28mJ (off), Td (on/off) @ 25°C: 76ns/815ns, Supplier Device Package: TO-262.
Weitere Produktangebote IRG4BC10SD-LPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRG4BC10SD-LPBF | Infineon Technologies |
Description: IGBT 600V 14A 38W TO262Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A Reverse Recovery Time (trr): 28 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA Packaging: Tube Power - Max: 38 W Current - Collector Pulsed (Icm): 18 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 14 A Part Status: Obsolete Gate Charge: 15 nC Test Condition: 480V, 8A, 100Ohm, 15V Switching Energy: 310µJ (on), 3.28mJ (off) Td (on/off) @ 25°C: 76ns/815ns Supplier Device Package: TO-262 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
|
IRG4BC10SD-LPBF | Infineon / IR |
IGBT Transistors 600V DC-1kHz |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRG4BC10SD-LPBF |
![]() |
Hersteller: Infineon Technologies
Description: IGBT 600V 14A 38W TO262
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 310µJ (on), 3.28mJ (off)
Td (on/off) @ 25°C: 76ns/815ns
Supplier Device Package: TO-262
Description: IGBT 600V 14A 38W TO262
Vce(on) (Max) @ Vge, Ic: 1.8V @ 15V, 8A
Reverse Recovery Time (trr): 28 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Packaging: Tube
Power - Max: 38 W
Current - Collector Pulsed (Icm): 18 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 14 A
Part Status: Obsolete
Gate Charge: 15 nC
Test Condition: 480V, 8A, 100Ohm, 15V
Switching Energy: 310µJ (on), 3.28mJ (off)
Td (on/off) @ 25°C: 76ns/815ns
Supplier Device Package: TO-262
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| IRG4BC10SD-LPBF |
![]() |
Hersteller: Infineon / IR
IGBT Transistors 600V DC-1kHz
IGBT Transistors 600V DC-1kHz
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



