Technische Details IRG4BC20SPBF IR
Description: IGBT 600V 19A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A, Supplier Device Package: TO-220AB, Td (on/off) @ 25°C: 27ns/540ns, Switching Energy: 120µJ (on), 2.05mJ (off), Test Condition: 480V, 10A, 50Ohm, 15V, Gate Charge: 27 nC, Current - Collector (Ic) (Max): 19 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 38 A, Power - Max: 60 W.
Weitere Produktangebote IRG4BC20SPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRG4BC20SPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 600V 19A 60000mW 3-Pin(3+Tab) TO-220AB Tube |
Produkt ist nicht verfügbar |
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IRG4BC20SPBF | Hersteller : Infineon Technologies |
Description: IGBT 600V 19A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 10A Supplier Device Package: TO-220AB Td (on/off) @ 25°C: 27ns/540ns Switching Energy: 120µJ (on), 2.05mJ (off) Test Condition: 480V, 10A, 50Ohm, 15V Gate Charge: 27 nC Current - Collector (Ic) (Max): 19 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 38 A Power - Max: 60 W |
Produkt ist nicht verfügbar |
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IRG4BC20SPBF | Hersteller : Infineon / IR |
IGBT Transistors 600V DC-1kHz |
Produkt ist nicht verfügbar |