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IRG4IBC10UDPBF

IRG4IBC10UDPBF Infineon Technologies


irg4ibc10udpbf.pdf?fileId=5546d462533600a401535643673122a9 Hersteller: Infineon Technologies
Description: IGBT 600V 6.8A 25W TO220FP
Packaging: Bulk
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 25 W
auf Bestellung 2157 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
228+2.15 EUR
Mindestbestellmenge: 228
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Technische Details IRG4IBC10UDPBF Infineon Technologies

Description: IGBT 600V 6.8A 25W TO220FP, Packaging: Bulk, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 28 ns, Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A, Supplier Device Package: TO-220AB Full-Pak, Td (on/off) @ 25°C: 40ns/87ns, Switching Energy: 140µJ (on), 120µJ (off), Test Condition: 480V, 5A, 100Ohm, 15V, Gate Charge: 15 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 6.8 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 27 A, Power - Max: 25 W.

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IRG4IBC10UDPBF IRG4IBC10UDPBF Hersteller : Infineon / IR Infineon-IRG4IBC10UD-DataSheet-v01_00-EN-1732979.pdf IGBT Transistors 600V UltraFast 8-60kHz
auf Bestellung 834 Stücke:
Lieferzeit 10-14 Tag (e)
IRG4IBC10UDPBF IRG4IBC10UDPBF Hersteller : INFINEON TECHNOLOGIES irg4ibc10udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
Anzahl je Verpackung: 1 Stücke
Produkt ist nicht verfügbar
IRG4IBC10UDPBF IRG4IBC10UDPBF Hersteller : Infineon Technologies irg4ibc10udpbf.pdf?fileId=5546d462533600a401535643673122a9 Description: IGBT 600V 6.8A 25W TO220FP
Packaging: Tube
Package / Case: TO-220-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 28 ns
Vce(on) (Max) @ Vge, Ic: 2.6V @ 15V, 5A
Supplier Device Package: TO-220AB Full-Pak
Td (on/off) @ 25°C: 40ns/87ns
Switching Energy: 140µJ (on), 120µJ (off)
Test Condition: 480V, 5A, 100Ohm, 15V
Gate Charge: 15 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 6.8 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 27 A
Power - Max: 25 W
Produkt ist nicht verfügbar
IRG4IBC10UDPBF IRG4IBC10UDPBF Hersteller : INFINEON TECHNOLOGIES irg4ibc10udpbf.pdf Category: THT IGBT transistors
Description: Transistor: IGBT; 600V; 3.9A; 25W; TO220AB; single transistor
Type of transistor: IGBT
Collector-emitter voltage: 600V
Collector current: 3.9A
Power dissipation: 25W
Case: TO220AB
Mounting: THT
Kind of package: tube
Semiconductor structure: single transistor
Features of semiconductor devices: integrated anti-parallel diode
Produkt ist nicht verfügbar