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IRG4PF50WD-201P

IRG4PF50WD-201P Infineon Technologies


infineon-irg4pf50wd-datasheet-v01_00-en.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 900V 51A 200000mW 3-Pin(3+Tab) TO-247AC
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Technische Details IRG4PF50WD-201P Infineon Technologies

Description: IGBT 900V 51A 200W TO247AC, Packaging: Bag, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 50ns/110ns, Switching Energy: 2.63mJ (on), 1.34mJ (off), Test Condition: 720V, 28A, 5Ohm, 15V, Gate Charge: 160 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 51 A, Voltage - Collector Emitter Breakdown (Max): 900 V, Current - Collector Pulsed (Icm): 204 A, Power - Max: 200 W.

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IRG4PF50WD-201P IRG4PF50WD-201P Hersteller : Infineon Technologies irg4pf50wdpbf.pdf?fileId=5546d462533600a401535647eed32305 Description: IGBT 900V 51A 200W TO247AC
Packaging: Bag
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 28A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 50ns/110ns
Switching Energy: 2.63mJ (on), 1.34mJ (off)
Test Condition: 720V, 28A, 5Ohm, 15V
Gate Charge: 160 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 900 V
Current - Collector Pulsed (Icm): 204 A
Power - Max: 200 W
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IRG4PF50WD-201P IRG4PF50WD-201P Hersteller : Infineon / IR irg4pf50wdpbf-1169383.pdf IGBT Modules
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