IRG7PH35UD-EP International Rectifier
auf Bestellung 4605 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 69+ | 7.11 EUR |
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Technische Details IRG7PH35UD-EP International Rectifier
Description: IGBT TRENCH 1200V 50A TO-247AD, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 105 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-247AD, IGBT Type: Trench, Td (on/off) @ 25°C: 30ns/160ns, Switching Energy: 1.06mJ (on), 620µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 85 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 60 A, Power - Max: 180 W.
Weitere Produktangebote IRG7PH35UD-EP nach Preis ab 7.11 EUR bis 8.06 EUR
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IRG7PH35UD-EP | Hersteller : Infineon Technologies |
 Description: IGBT TRENCH 1200V 50A TO-247ADPackaging: Bulk Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 1.06mJ (on), 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 180 W |
auf Bestellung 416 Stücke: Lieferzeit 10-14 Tag (e) |
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IRG7PH35UD-EP | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 180W 3-Pin(3+Tab) TO-247AD Tube |
auf Bestellung 350 Stücke: Lieferzeit 14-21 Tag (e) |
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IRG7PH35UD-EP | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRG7PH35UD-EP - IRG7PH35UD IGBT WITH ANTI-PARALLEL DIOD tariffCode: 85423990 productTraceability: No rohsCompliant: YES euEccn: TBC hazardous: false rohsPhthalatesCompliant: TBA usEccn: TBC SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 415 Stücke: Lieferzeit 14-21 Tag (e) |
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IRG7PH35UD-EP | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 1200V 50A 180000mW 3-Pin(3+Tab) TO-247AD Tube |
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IRG7PH35UD-EP | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 70W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 85nC Kind of package: tube Turn-on time: 45ns Turn-off time: 240ns Features of semiconductor devices: integrated anti-parallel diode Anzahl je Verpackung: 1 Stücke |
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IRG7PH35UD-EP | Hersteller : Infineon Technologies |
Description: IGBT TRENCH 1200V 50A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 105 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AD IGBT Type: Trench Td (on/off) @ 25°C: 30ns/160ns Switching Energy: 1.06mJ (on), 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 60 A Power - Max: 180 W |
Produkt ist nicht verfügbar |
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IRG7PH35UD-EP | Hersteller : Infineon Technologies |
IGBTs INDUSTRY 59 |
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IRG7PH35UD-EP | Hersteller : INFINEON TECHNOLOGIES |
Category: THT IGBT transistors Description: Transistor: IGBT; 1.2kV; 25A; 70W; TO247-3 Type of transistor: IGBT Collector-emitter voltage: 1.2kV Collector current: 25A Power dissipation: 70W Case: TO247-3 Gate-emitter voltage: ±30V Pulsed collector current: 60A Mounting: THT Gate charge: 85nC Kind of package: tube Turn-on time: 45ns Turn-off time: 240ns Features of semiconductor devices: integrated anti-parallel diode |
Produkt ist nicht verfügbar |