IRG7PH35UD1PBF Infineon Technologies
Hersteller: Infineon TechnologiesTrans IGBT Chip N-CH 1200V 50A 179000mW 3-Pin(3+Tab) TO-247AC Tube
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Technische Details IRG7PH35UD1PBF Infineon Technologies
Description: IGBT 1200V 50A 179W TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A, Supplier Device Package: TO-247AC, IGBT Type: Trench, Td (on/off) @ 25°C: -/160ns, Switching Energy: 620µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 85 nC, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 150 A, Power - Max: 179 W.
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IRG7PH35UD1PBF | Hersteller : Infineon Technologies |
Description: IGBT 1200V 50A 179W TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 20A Supplier Device Package: TO-247AC IGBT Type: Trench Td (on/off) @ 25°C: -/160ns Switching Energy: 620µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 85 nC Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 150 A Power - Max: 179 W |
Produkt ist nicht verfügbar |
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IRG7PH35UD1PBF | Hersteller : Infineon / IR |
IGBT Transistors 1200V Trench IGBT Inductn Cooking 50A |
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