Produkte > INFINEON / IR > IRG8P08N120KDPBF
IRG8P08N120KDPBF

IRG8P08N120KDPBF Infineon / IR


irg8p08n120kdpbf-1302918.pdf Hersteller: Infineon / IR
IGBT Transistors 1200V IGBT GEN8
auf Bestellung 169 Stücke:

Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details IRG8P08N120KDPBF Infineon / IR

Description: IGBT 1200V 15A TO-247AC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 50 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A, Supplier Device Package: TO-247AC, Td (on/off) @ 25°C: 20ns/160ns, Switching Energy: 300µJ (on), 300µJ (off), Test Condition: 600V, 5A, 47Ohm, 15V, Gate Charge: 45 nC, Current - Collector (Ic) (Max): 15 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 15 A, Power - Max: 89 W.

Weitere Produktangebote IRG8P08N120KDPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
IRG8P08N120KDPBF IRG8P08N120KDPBF Hersteller : Infineon Technologies IRG8x08N120KD.pdf Description: IGBT 1200V 15A TO-247AC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 50 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 5A
Supplier Device Package: TO-247AC
Td (on/off) @ 25°C: 20ns/160ns
Switching Energy: 300µJ (on), 300µJ (off)
Test Condition: 600V, 5A, 47Ohm, 15V
Gate Charge: 45 nC
Current - Collector (Ic) (Max): 15 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 15 A
Power - Max: 89 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH