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IRG8P15N120KD-EPBF

IRG8P15N120KD-EPBF International Rectifier

IRSD-S-A0000034006-1.pdf?t.download=true&u=5oefqw Hersteller: International Rectifier
Description: IRG8P15N120 - DISCRETE IGBT WITH
Packaging: Bulk
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 60 ns
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 15ns/170ns
Switching Energy: 600µJ (on), 600µJ (off)
Test Condition: 600V, 10A, 10Ohm, 15V
Gate Charge: 98 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 30 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 30 A
Power - Max: 125 W
auf Bestellung 8125 Stücke:
Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
90+8.2 EUR
Mindestbestellmenge: 90
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Technische Details IRG8P15N120KD-EPBF International Rectifier

Description: IRG8P15N120 - DISCRETE IGBT WITH, Packaging: Bulk, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 60 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 10A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 15ns/170ns, Switching Energy: 600µJ (on), 600µJ (off), Test Condition: 600V, 10A, 10Ohm, 15V, Gate Charge: 98 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 30 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 30 A, Power - Max: 125 W.

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IRG8P15N120KD-EPBF IRG8P15N120KD-EPBF Hersteller : Infineon / IR irg8p15n120kdpbf-937943.pdf IGBT Transistors 1200V IGBT GEN8
auf Bestellung 105 Stücke:
Lieferzeit 14-28 Tag (e)