Technische Details IRG8P60N120KD-EPBF Infineon / IR
Description: IGBT 1200V 100A TO-247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 210 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 40ns/240ns, Switching Energy: 2.8mJ (on), 2.3mJ (off), Test Condition: 600V, 40A, 5Ohm, 15V, Gate Charge: 345 nC, Current - Collector (Ic) (Max): 100 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 420 W.
Weitere Produktangebote IRG8P60N120KD-EPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
IRG8P60N120KD-EPBF | Hersteller : Infineon Technologies |
 Trans IGBT Chip N-CH 1200V 100A 420000mW 3-Pin(3+Tab) TO-247AD Tube |
Produkt ist nicht verfügbar |
|
 |
IRG8P60N120KD-EPBF | Hersteller : Infineon Technologies |
Description: IGBT 1200V 100A TO-247AD Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 150°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 210 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 40A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 40ns/240ns Switching Energy: 2.8mJ (on), 2.3mJ (off) Test Condition: 600V, 40A, 5Ohm, 15V Gate Charge: 345 nC Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 420 W |
Produkt ist nicht verfügbar |