IRGB5B120KDPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: IGBT 1200V 12A 89W TO220AB
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 160 ns
Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A
Supplier Device Package: TO-220AB
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 390µJ (on), 330µJ (off)
Test Condition: 600V, 6A, 50Ohm, 15V
Gate Charge: 25 nC
Current - Collector (Ic) (Max): 12 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 24 A
Power - Max: 89 W
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Technische Details IRGB5B120KDPBF Infineon Technologies
Description: IGBT 1200V 12A 89W TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 160 ns, Vce(on) (Max) @ Vge, Ic: 3V @ 15V, 6A, Supplier Device Package: TO-220AB, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/100ns, Switching Energy: 390µJ (on), 330µJ (off), Test Condition: 600V, 6A, 50Ohm, 15V, Gate Charge: 25 nC, Current - Collector (Ic) (Max): 12 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 24 A, Power - Max: 89 W.
Weitere Produktangebote IRGB5B120KDPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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IRGB5B120KDPBF | Hersteller : Infineon / IR |
IGBT Transistors 1200V UltraFast 10-30kHz |
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