 
IRGIB6B60KD116P Infineon Technologies
 Hersteller: Infineon Technologies
                                                Hersteller: Infineon TechnologiesTrans IGBT Chip N-CH 600V 11A 38000mW 3-Pin(3+Tab) TO-220 Full-Pack
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Technische Details IRGIB6B60KD116P Infineon Technologies
Description: IGBT NPT 600V 11A TO220AB FP, Packaging: Tube, Package / Case: TO-220-3 Full Pack, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 70 ns, Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A, Supplier Device Package: TO-220AB Full-Pak, IGBT Type: NPT, Td (on/off) @ 25°C: 25ns/215ns, Switching Energy: 110µJ (on), 135µJ (off), Test Condition: 400V, 5A, 100Ohm, 15V, Gate Charge: 18.2 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 38 W. 
Weitere Produktangebote IRGIB6B60KD116P
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis | 
|---|---|---|---|---|---|
|   | IRGIB6B60KD116P | Hersteller : Infineon Technologies |  Description: IGBT NPT 600V 11A TO220AB FP Packaging: Tube Package / Case: TO-220-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 70 ns Vce(on) (Max) @ Vge, Ic: 2.2V @ 15V, 5A Supplier Device Package: TO-220AB Full-Pak IGBT Type: NPT Td (on/off) @ 25°C: 25ns/215ns Switching Energy: 110µJ (on), 135µJ (off) Test Condition: 400V, 5A, 100Ohm, 15V Gate Charge: 18.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 11 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 22 A Power - Max: 38 W | Produkt ist nicht verfügbar | |
|   | IRGIB6B60KD116P | Hersteller : Infineon / IR |  IGBT Transistors | Produkt ist nicht verfügbar |