Technische Details IRGP4760D-EPBF Infineon / IR
Description: IGBT 650V TO-247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 170 ns, Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 70ns/140ns, Switching Energy: 1.7mJ (on), 1mJ (off), Test Condition: 400V, 48A, 10Ohm, 15V, Gate Charge: 145 nC, Current - Collector (Ic) (Max): 90 A, Voltage - Collector Emitter Breakdown (Max): 650 V, Current - Collector Pulsed (Icm): 144 A, Power - Max: 325 W.
Weitere Produktangebote IRGP4760D-EPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRGP4760D-EPBF | Hersteller : Infineon |
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auf Bestellung 26000 Stücke: Lieferzeit 21-28 Tag (e) |
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IRGP4760D-EPBF | Hersteller : Infineon Technologies |
Trans IGBT Chip N-CH 650V 90A 325000mW 3-Pin(3+Tab) TO-247AD Tube |
Produkt ist nicht verfügbar |
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IRGP4760D-EPBF | Hersteller : Infineon Technologies |
Description: IGBT 650V TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 170 ns Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 48A Supplier Device Package: TO-247AD Td (on/off) @ 25°C: 70ns/140ns Switching Energy: 1.7mJ (on), 1mJ (off) Test Condition: 400V, 48A, 10Ohm, 15V Gate Charge: 145 nC Current - Collector (Ic) (Max): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 144 A Power - Max: 325 W |
Produkt ist nicht verfügbar |