Produkte > INFINEON TECHNOLOGIES > IRGP6690D-EPBF
IRGP6690D-EPBF

IRGP6690D-EPBF Infineon Technologies


3633irgp6690dpbf.pdf Hersteller: Infineon Technologies
Trans IGBT Chip N-CH 600V 140A 483000mW 3-Pin(3+Tab) TO-247AD Tube
Produkt ist nicht verfügbar

Produktrezensionen
Produktbewertung abgeben

Technische Details IRGP6690D-EPBF Infineon Technologies

Description: IGBT 600V 90A TO247AD, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 90 ns, Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A, Supplier Device Package: TO-247AD, Td (on/off) @ 25°C: 85ns/222ns, Switching Energy: 2.4mJ (on), 2.2mJ (off), Test Condition: 400V, 75A, 10Ohm, 15V, Gate Charge: 140 nC, Current - Collector (Ic) (Max): 140 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 225 A, Power - Max: 483 W.

Weitere Produktangebote IRGP6690D-EPBF

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
IRGP6690D-EPBF IRGP6690D-EPBF Hersteller : Infineon Technologies IRGP6690DPbF%2C-EPbF.pdf Description: IGBT 600V 90A TO247AD
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 90 ns
Vce(on) (Max) @ Vge, Ic: 1.95V @ 15V, 75A
Supplier Device Package: TO-247AD
Td (on/off) @ 25°C: 85ns/222ns
Switching Energy: 2.4mJ (on), 2.2mJ (off)
Test Condition: 400V, 75A, 10Ohm, 15V
Gate Charge: 140 nC
Current - Collector (Ic) (Max): 140 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 483 W
Produkt ist nicht verfügbar
IRGP6690D-EPBF IRGP6690D-EPBF Hersteller : Infineon / IR infn_s_a0008740535_1-2271295.pdf IGBT Transistors 600V UltraFast IGBT TO-247
Produkt ist nicht verfügbar