IRGS4B60KPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: IGBT 600V D2PAK-3
Power - Max: 63 W
Current - Collector Pulsed (Icm): 24 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 12 A
Gate Charge: 12 nC
Test Condition: 400V, 4A, 100Ohm, 15V
Switching Energy: 73µJ (on), 47µJ (off)
Td (on/off) @ 25°C: 22ns/100ns
IGBT Type: NPT
Supplier Device Package: D2PAK
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
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Technische Details IRGS4B60KPBF Infineon Technologies
Description: IGBT 600V D2PAK-3, Power - Max: 63 W, Current - Collector Pulsed (Icm): 24 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector (Ic) (Max): 12 A, Gate Charge: 12 nC, Test Condition: 400V, 4A, 100Ohm, 15V, Switching Energy: 73µJ (on), 47µJ (off), Td (on/off) @ 25°C: 22ns/100ns, IGBT Type: NPT, Supplier Device Package: D2PAK, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A, Input Type: Standard, Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube.