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IRGSL4B60KD1PBF

IRGSL4B60KD1PBF International Rectifier


Infineon-SPS03N60C3-DS-v02_02-en.pdf?fileId=db3a3043416e106e0141735112803715 Hersteller: International Rectifier
Description: IRGSL4B60 - DISCRETE IGBT WITH A
Packaging: Bulk
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 93 ns
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A
Supplier Device Package: TO-262
IGBT Type: NPT
Td (on/off) @ 25°C: 22ns/100ns
Switching Energy: 73µJ (on), 47µJ (off)
Test Condition: 400V, 4A, 100Ohm, 15V
Gate Charge: 12 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 11 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 22 A
Power - Max: 63 W
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Lieferzeit 21-28 Tag (e)
Anzahl Preis ohne MwSt
293+2.45 EUR
Mindestbestellmenge: 293
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Technische Details IRGSL4B60KD1PBF International Rectifier

Description: IRGSL4B60 - DISCRETE IGBT WITH A, Packaging: Bulk, Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Input Type: Standard, Reverse Recovery Time (trr): 93 ns, Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 4A, Supplier Device Package: TO-262, IGBT Type: NPT, Td (on/off) @ 25°C: 22ns/100ns, Switching Energy: 73µJ (on), 47µJ (off), Test Condition: 400V, 4A, 100Ohm, 15V, Gate Charge: 12 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 11 A, Voltage - Collector Emitter Breakdown (Max): 600 V, Current - Collector Pulsed (Icm): 22 A, Power - Max: 63 W.

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IRGSL4B60KD1PBF IRGSL4B60KD1PBF Hersteller : Infineon / IR infineon_05042021_IRGS4B60-2322797.pdf IGBT Transistors 600V Low-Vceon Non Punch Through
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