IRL1404ZSPBF Infineon Technologies
auf Bestellung 679 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 311+ | 1.76 EUR |
| 500+ | 1.53 EUR |
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Technische Details IRL1404ZSPBF Infineon Technologies
Description: MOSFET N-CH 40V 75A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 75A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V, Power Dissipation (Max): 230W (Tc), Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V.
Weitere Produktangebote IRL1404ZSPBF nach Preis ab 1.48 EUR bis 1.54 EUR
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IRL1404ZSPBF Produktcode: 27885
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Lieblingsprodukt
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Hersteller : IR |
 Transistoren > MOSFET N-CHGehäuse: D2Pak (TO-263-3) Uds,V: 40 V Idd,A: 120 A Rds(on), Ohm: 3,1 mOhm Ciss, pF/Qg, nC: 5080/75 Bem.: Управління логічним рівнем JHGF: SMD |
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IRL1404ZSPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 40V 75A D2PAK Packaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 75A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 75A, 10V Power Dissipation (Max): 230W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 5080 pF @ 25 V |
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IRL1404ZSPBF | Hersteller : Infineon Technologies |
MOSFETs 40V 1 N-CH HEXFET 3.1mOhms 75nC |
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IRL1404ZSPBF | Hersteller : Infineon (IRF) |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 120A; Idm: 790A; 230W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 40V Drain current: 120A Pulsed drain current: 790A Power dissipation: 230W Case: D2PAK Gate-source voltage: ±16V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 75nC Kind of package: tube Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |