IRL2203NPBF-INF Infineon Technologies
Hersteller: Infineon Technologies
Description: HEXFET POWER MOSFET
Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V
Current - Continuous Drain (Id) @ 25°C: 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Bulk
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Technische Details IRL2203NPBF-INF Infineon Technologies
Description: HEXFET POWER MOSFET, Input Capacitance (Ciss) (Max) @ Vds: 3290 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: TO-220AB, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 180W (Tc), Rds On (Max) @ Id, Vgs: 7mOhm @ 60A, 10V, Current - Continuous Drain (Id) @ 25°C: 116A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3, Packaging: Bulk.