IRL2910STRL Infineon
Hersteller: InfineonTransistor N-MOSFET; 100V; 16V; 40mOhm; 55A; 200W; -55°C ~ 175°C; Replacement: IRL2910S; IRL2910STRL; IRL2910STRR; IRL2910S-GURT; IRL2910S; IRL2910STRL TIRL2910s
Anzahl je Verpackung: 10 Stücke
auf Bestellung 180 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 4.55 EUR |
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Technische Details IRL2910STRL Infineon
Description: MOSFET N-CH 100V 55A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 55A (Tc), Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V, Power Dissipation (Max): 3.8W (Ta), 200W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: D2PAK, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V.
Weitere Produktangebote IRL2910STRL nach Preis ab 4.55 EUR bis 4.55 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| IRL2910STRL | Hersteller : Infineon |
Transistor N-MOSFET; 100V; 16V; 40mOhm; 55A; 200W; -55°C ~ 175°C; Replacement: IRL2910S; IRL2910STRL; IRL2910STRR; IRL2910S-GURT; IRL2910S; IRL2910STRL TIRL2910s Anzahl je Verpackung: 10 Stücke |
auf Bestellung 800 Stücke: Lieferzeit 7-14 Tag (e) |
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IRL2910STRL | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 100V 55A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 29A, 10V Power Dissipation (Max): 3.8W (Ta), 200W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: D2PAK Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 140 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 3700 pF @ 25 V |
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