Technische Details IRL3102PBF IR
Description: MOSFET N-CH 20V 61A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 61A (Tc), Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V, Power Dissipation (Max): 89W (Tc), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: TO-220AB, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V.
Weitere Produktangebote IRL3102PBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRL3102PBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 20V 61A 3-Pin(3+Tab) TO-220AB |
Produkt ist nicht verfügbar |
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IRL3102PBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 61A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 61A (Tc) Rds On (Max) @ Id, Vgs: 13mOhm @ 37A, 7V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: TO-220AB Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 7V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRL3102PBF | Hersteller : Infineon / IR |
MOSFET 20V 1 N-CH HEXFET 15mOhms 38.7nC |
Produkt ist nicht verfügbar |