IRL3103STRLPBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 64A D2PAK
Packaging: Bulk
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 64A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V
Power Dissipation (Max): 94W (Tc)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: D2PAK
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V
auf Bestellung 159064 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 586+ | 0.86 EUR |
Produktrezensionen
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Technische Details IRL3103STRLPBF Infineon Technologies
Description: MOSFET N-CH 30V 64A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 64A (Tc), Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V, Power Dissipation (Max): 94W (Tc), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: D2PAK, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V.
Weitere Produktangebote IRL3103STRLPBF nach Preis ab 0.78 EUR bis 0.86 EUR
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IRL3103STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 23413 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL3103STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 135329 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL3103STRLPBF | Hersteller : ROCHESTER ELECTRONICS |
Description: ROCHESTER ELECTRONICS - IRL3103STRLPBF - IRL3103 12V-300V N-CHANNEL POWER MOSFET tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: TBA usEccn: EAR99 SVHC: No SVHC (27-Jun-2024) |
auf Bestellung 250 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL3103STRLPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 30V 64A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRL3103STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level Anzahl je Verpackung: 800 Stücke |
Produkt ist nicht verfügbar |
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IRL3103STRLPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 30V 64A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 64A (Tc) Rds On (Max) @ Id, Vgs: 12mOhm @ 34A, 10V Power Dissipation (Max): 94W (Tc) Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: D2PAK Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1650 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL3103STRLPBF | Hersteller : Infineon / IR |
MOSFET 30V 1 N-CH HEXFET 12mOhms 22nC |
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IRL3103STRLPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 64A; 110W; D2PAK Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 30V Drain current: 64A Power dissipation: 110W Case: D2PAK Mounting: SMD Kind of package: reel Kind of channel: enhancement Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |