IRL3715ZSPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK
Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V
Current - Continuous Drain (Id) @ 25°C: 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: D2PAK
Vgs(th) (Max) @ Id: 2.55V @ 250µA
Power Dissipation (Max): 45W (Tc)
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Technische Details IRL3715ZSPBF Infineon Technologies
Description: MOSFET N-CH 20V 50A D2PAK, Rds On (Max) @ Id, Vgs: 11mOhm @ 15A, 10V, Current - Continuous Drain (Id) @ 25°C: 50A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: D2PAK, Vgs(th) (Max) @ Id: 2.55V @ 250µA, Power Dissipation (Max): 45W (Tc).
Weitere Produktangebote IRL3715ZSPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
|
IRL3715ZSPBF | Infineon / IR |
MOSFET MOSFT 20V 50A 11mOhm 7nC Qg Log Lvl |
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| IRL3715ZSPBF |
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Hersteller: Infineon / IR
MOSFET MOSFT 20V 50A 11mOhm 7nC Qg Log Lvl
MOSFET MOSFT 20V 50A 11mOhm 7nC Qg Log Lvl
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH



