IRL40B209

Hersteller: Infineon
MOSFET N-CH 40V 195A TO-220-3 Транзистори

Hersteller: Infineon Technologies
Description: MOSFET N-CH 40V 195A TO220AB
Input Capacitance (Ciss) (Max) @ Vds: 15140 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 270 nC @ 4.5 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: TO-220AB
Vgs(th) (Max) @ Id: 2.4V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 1.25mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 195A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube

Hersteller: Infineon Technologies
MOSFETs 40V, 195A, 1.25 mOhm 180 nC Qg, Logic Lv