auf Bestellung 888 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 14+ | 3.9 EUR |
| 17+ | 3.2 EUR |
| 100+ | 2.49 EUR |
| 500+ | 2.12 EUR |
| 1000+ | 1.72 EUR |
| 2000+ | 1.62 EUR |
| 5000+ | 1.54 EUR |
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Technische Details IRL530PBF-BE3 Vishay / Siliconix
Description: MOSFET N-CH 100V 15A TO220AB, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 15A (Tc), Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V, Power Dissipation (Max): 88W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-220AB, Part Status: Active, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V.
Weitere Produktangebote IRL530PBF-BE3
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRL530PBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 15A TO220AB Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 9A, 5V Power Dissipation (Max): 88W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-220AB Part Status: Active Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 930 pF @ 25 V |
auf Bestellung 5 Stücke: Lieferzeit 21-28 Tag (e) |
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IRL530PBF-BE3 | Hersteller : Vishay |
 Trans MOSFET N-CH 100V 15A |
Produkt ist nicht verfügbar |