IRL60S216 Infineon Technologies
auf Bestellung 270 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 42+ | 3.54 EUR |
| 50+ | 3.39 EUR |
| 100+ | 3.24 EUR |
| 250+ | 3.09 EUR |
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Technische Details IRL60S216 Infineon Technologies
Description: MOSFET N-CH 60V 195A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 195A (Tc), Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V, Power Dissipation (Max): 375W (Tc), Vgs(th) (Max) @ Id: 2.4V @ 250µA, Supplier Device Package: PG-TO263-3, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V.
Weitere Produktangebote IRL60S216 nach Preis ab 3.09 EUR bis 3.54 EUR
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IRL60S216 | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH 60V 298A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 270 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL60S216 | Hersteller : Infineon / IR |
MOSFET 60V, 298A, 1.95 mOhm 170 NC Qg |
auf Bestellung 3189 Stücke: Lieferzeit 14-28 Tag (e) |
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IRL60S216 | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 60V 298A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRL60S216 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL60S216 | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 60V 195A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 195A (Tc) Rds On (Max) @ Id, Vgs: 1.95mOhm @ 100A, 10V Power Dissipation (Max): 375W (Tc) Vgs(th) (Max) @ Id: 2.4V @ 250µA Supplier Device Package: PG-TO263-3 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 255 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 15330 pF @ 25 V |
Produkt ist nicht verfügbar |