IRL620SPBF Vishay Semiconductors
auf Bestellung 583 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 4.33 EUR |
| 10+ | 3.22 EUR |
| 100+ | 3.19 EUR |
| 250+ | 2.76 EUR |
| 500+ | 2.64 EUR |
| 1000+ | 2.29 EUR |
| 2000+ | 2.25 EUR |
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Technische Details IRL620SPBF Vishay Semiconductors
Description: MOSFET N-CH 200V 5.2A D2PAK, Packaging: Tube, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc), Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V, Power Dissipation (Max): 3.1W (Ta), 50W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V.
Weitere Produktangebote IRL620SPBF nach Preis ab 4.80 EUR bis 4.80 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRL620SPBF | Hersteller : Vishay Siliconix |
 Description: MOSFET N-CH 200V 5.2A D2PAKPackaging: Tube Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.2A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 3.1A, 10V Power Dissipation (Max): 3.1W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 360 pF @ 25 V |
auf Bestellung 14 Stücke: Lieferzeit 10-14 Tag (e) |
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IRL620SPBF | Hersteller : VISHAY |
Description: VISHAY - IRL620SPBF - Leistungs-MOSFET, n-Kanal, 200 V, 5.2 A, 0.8 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 200V rohsCompliant: YES Dauer-Drainstrom Id: 5.2A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - MSL: MSL 3 - 168 Stunden usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 50W Bauform - Transistor: TO-263 (D2PAK) Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.8ohm |
auf Bestellung 74 Stücke: Lieferzeit 14-21 Tag (e) |
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IRL620SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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IRL620SPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 5.2A 3-Pin(2+Tab) D2PAK |
Produkt ist nicht verfügbar |
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| IRL620SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 21A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 1Ω Mounting: SMD Gate charge: 16nC Kind of package: tube Kind of channel: enhancement Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| IRL620SPBF | Hersteller : VISHAY |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 200V; 5.2A; Idm: 21A; 50W Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 200V Drain current: 5.2A Pulsed drain current: 21A Power dissipation: 50W Case: D2PAK; TO263 Gate-source voltage: ±10V On-state resistance: 1Ω Mounting: SMD Gate charge: 16nC Kind of package: tube Kind of channel: enhancement |
Produkt ist nicht verfügbar |