auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 3.78 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.6 EUR |
| 250+ | 2.36 EUR |
| 500+ | 2.29 EUR |
| 800+ | 2.01 EUR |
| 2400+ | 1.99 EUR |
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Technische Details IRL630STRLPBF Vishay Semiconductors
Description: MOSFET N-CH 200V 9A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Tc), Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V, Power Dissipation (Max): 3.1W (Ta), 74W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V.
Weitere Produktangebote IRL630STRLPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRL630STRLPBF | Hersteller : Vishay |
 Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRL630STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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IRL630STRLPBF | Hersteller : Vishay |
Trans MOSFET N-CH 200V 9A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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| IRL630STRLPBF | Hersteller : VISHAY |
IRL630STRLPBF SMD N channel transistors |
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IRL630STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |
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IRL630STRLPBF | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 200V 9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 400mOhm @ 5.4A, 5V Power Dissipation (Max): 3.1W (Ta), 74W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 200 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1100 pF @ 25 V |
Produkt ist nicht verfügbar |