IRL6342TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 4+ | 0.88 EUR |
| 10+ | 0.76 EUR |
| 100+ | 0.53 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.37 EUR |
| 2000+ | 0.34 EUR |
| 4000+ | 0.32 EUR |
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Technische Details IRL6342TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO, Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Not For New Designs, Supplier Device Package: 8-SO, Vgs(th) (Max) @ Id: 1.1V @ 10µA, Power Dissipation (Max): 2.5W (Ta), Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 8-SOIC (0.154", 3.90mm Width), Packaging: Tape & Reel (TR).
Weitere Produktangebote IRL6342TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Preis |
|---|---|---|---|---|---|
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IRL6342TRPBF | Infineon Technologies |
 Description: MOSFET N-CH 30V 9.9A 8SOInput Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 10µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH |
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IRL6342TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 9.9A 8SO Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: 8-SO Vgs(th) (Max) @ Id: 1.1V @ 10µA Power Dissipation (Max): 2.5W (Ta) Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| IRL6342TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9.9A 8SO
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| IRL6342TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 9.9A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 30V 9.9A 8SO
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 8-SO
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.5W (Ta)
Rds On (Max) @ Id, Vgs: 14.6mOhm @ 9.9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9.9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH