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IRL640STRRPBF

IRL640STRRPBF Vishay Siliconix

sihl640s.pdf Hersteller: Vishay Siliconix
Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+2.19 EUR
1600+2.15 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRL640STRRPBF Vishay Siliconix

Description: MOSFET N-CH 200V 17A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V, Power Dissipation (Max): 3.1W (Ta), 125W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 200 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V.

Weitere Produktangebote IRL640STRRPBF nach Preis ab 2.16 EUR bis 4.49 EUR

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IRL640STRRPBF IRL640STRRPBF Hersteller : Vishay Siliconix sihl640s.pdf Description: MOSFET N-CH 200V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 10A, 5V
Power Dissipation (Max): 3.1W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 3963 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.44 EUR
10+3.41 EUR
100+2.72 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
IRL640STRRPBF IRL640STRRPBF Hersteller : Vishay Semiconductors sihl640s.pdf MOSFETs N-Chan 200V 17 Amp
auf Bestellung 1610 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.49 EUR
10+3.27 EUR
100+2.5 EUR
250+2.22 EUR
800+2.2 EUR
4800+2.16 EUR
Im Einkaufswagen  Stück im Wert von  UAH
IRL640STRRPBF IRL640STRRPBF Hersteller : Vishay sihl640s.pdf Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK T/R
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IRL640STRRPBF IRL640STRRPBF Hersteller : Vishay sihl640s.pdf Trans MOSFET N-CH 200V 17A 3-Pin(2+Tab) D2PAK T/R
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IRL640STRRPBF Hersteller : VISHAY sihl640s.pdf IRL640STRRPBF SMD N channel transistors
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