IRL80HS120 Infineon Technologies


Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4000+0.53 EUR
8000+0.5 EUR
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRL80HS120 Infineon Technologies

Description: MOSFET N-CH 80V 12.5A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc), Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V, Power Dissipation (Max): 11.5W (Tc), Vgs(th) (Max) @ Id: 2V @ 10µA, Supplier Device Package: 6-PQFN (2x2) (DFN2020), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V.

Weitere Produktangebote IRL80HS120 nach Preis ab 0.59 EUR bis 2.15 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit Preis
IRL80HS120 IRL80HS120 Infineon Technologies Infineon_IRL80HS120_DataSheet_v03_01_EN-3363571.pdf MOSFETs N
auf Bestellung 9508 Stücke:
Lieferzeit 10-14 Tag (e)
4+0.92 EUR
10+0.91 EUR
100+0.76 EUR
500+0.67 EUR
1000+0.63 EUR
2000+0.6 EUR
4000+0.59 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL80HS120 IRL80HS120 Infineon Technologies Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191 Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 16807 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.61 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL80HS120 Infineon_IRL80HS120_DataSheet_v03_01_EN-3363571.pdf
Hersteller: Infineon Technologies
MOSFETs N
auf Bestellung 9508 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
4+0.92 EUR
10+0.91 EUR
100+0.76 EUR
500+0.67 EUR
1000+0.63 EUR
2000+0.6 EUR
4000+0.59 EUR
Mindestbestellmenge: 4 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
IRL80HS120 Infineon-IRL80HS120-DS-v01_02-EN.pdf?fileId=5546d46259d9a4bf015a4b3b1df71191
Hersteller: Infineon Technologies
Description: MOSFET N-CH 80V 12.5A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Tc)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.5A, 10V
Power Dissipation (Max): 11.5W (Tc)
Vgs(th) (Max) @ Id: 2V @ 10µA
Supplier Device Package: 6-PQFN (2x2) (DFN2020)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 540 pF @ 25 V
auf Bestellung 16807 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
9+2.15 EUR
13+1.36 EUR
100+0.9 EUR
500+0.7 EUR
1000+0.64 EUR
2000+0.61 EUR
Mindestbestellmenge: 9 Stücke
Im Einkaufswagen  Stück im Wert von  UAH