IRL8113LPBF

IRL8113LPBF Infineon Technologies


infineon-irl8113-datasheet-v01_01-en.pdf Hersteller: Infineon Technologies
Trans MOSFET N-CH 30V 105A 3-Pin(3+Tab) TO-262
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Technische Details IRL8113LPBF Infineon Technologies

Description: MOSFET N-CH 30V 105A TO262, Packaging: Tube, Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 105A (Tc), Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V, Power Dissipation (Max): 110W (Tc), Vgs(th) (Max) @ Id: 2.25V @ 250µA, Supplier Device Package: TO-262, Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V.

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IRL8113LPBF IRL8113LPBF Hersteller : Infineon Technologies IRL8113(S,L)PbF.pdf Description: MOSFET N-CH 30V 105A TO262
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I²Pak, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 105A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 21A, 10V
Power Dissipation (Max): 110W (Tc)
Vgs(th) (Max) @ Id: 2.25V @ 250µA
Supplier Device Package: TO-262
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2840 pF @ 15 V
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IRL8113LPBF IRL8113LPBF Hersteller : Infineon / IR irl8113-1169536.pdf MOSFET MOSFT 30V 105A 6mOhm 23nC Log Lvl
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