IRLD120 Siliconix
auf Bestellung 100 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 30+ | 1.13 EUR |
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Technische Details IRLD120 Siliconix
Description: MOSFET N-CH 100V 1.3A 4DIP, Packaging: Tube, Package / Case: 4-DIP (0.300", 7.62mm), Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta), Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 5V, Power Dissipation (Max): 1.3W (Ta), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 4-HVMDIP, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V.
Weitere Produktangebote IRLD120
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRLD120 Produktcode: 107905 |
 Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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IRLD120 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.3A 4-Pin HVMDIP |
Produkt ist nicht verfügbar |
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IRLD120 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.3A 4DIP Packaging: Tube Package / Case: 4-DIP (0.300", 7.62mm) Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.3A (Ta) Rds On (Max) @ Id, Vgs: 270mOhm @ 780mA, 5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 4-HVMDIP Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 490 pF @ 25 V |
Produkt ist nicht verfügbar |