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IRLH6224TR2PBF Infineon Technologies


irlh6224pbf.pdf?fileId=5546d462533600a4015356637a02259f
Hersteller: Infineon Technologies
Description: MOSFET N CH 20V 28A PQFN 5X6 MM
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 1.1V @ 50µA
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
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Technische Details IRLH6224TR2PBF Infineon Technologies

Description: MOSFET N CH 20V 28A PQFN 5X6 MM, Packaging: Cut Tape (CT), Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Part Status: Obsolete, Supplier Device Package: 8-PQFN (5x6), Vgs(th) (Max) @ Id: 1.1V @ 50µA, Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 105A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 8-PowerTDFN.