IRLHS2242TR2PBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 20V 5.8A 2X2 PQFN
Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Drain to Source Voltage (Vdss): 20 V
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
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Technische Details IRLHS2242TR2PBF Infineon Technologies
Description: MOSFET P-CH 20V 5.8A 2X2 PQFN, Input Capacitance (Ciss) (Max) @ Vds: 877 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V, Drain to Source Voltage (Vdss): 20 V, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 1.1V @ 10µA, Rds On (Max) @ Id, Vgs: 31mOhm @ 8.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), 15A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Mounting Type: Surface Mount, Package / Case: 6-PowerVDFN, Packaging: Cut Tape (CT).