IRLHS6276TRPBF Infineon Technologies
auf Bestellung 19900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.22 EUR |
| 10+ | 0.82 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.42 EUR |
| 1000+ | 0.34 EUR |
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Produktbewertung abgeben
Technische Details IRLHS6276TRPBF Infineon Technologies
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3.4A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm, Verlustleistung, p-Kanal: 6.6W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: HEXFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 6.6W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (21-Jan-2025).
Weitere Produktangebote IRLHS6276TRPBF nach Preis ab 0.31 EUR bis 1.25 EUR
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IRLHS6276TRPBF | Hersteller : Infineon Technologies |
 Description: MOSFET 2N-CH 20V 4.5A PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active |
auf Bestellung 3265 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLHS6276TRPBF | Hersteller : INFINEON |
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 6.6W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: HEXFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 6.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (21-Jan-2025) |
auf Bestellung 4000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLHS6276TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH 20V 4.5A 6-Pin PQFN EP T/R |
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IRLHS6276TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Drain-source voltage: 20V Drain current: 12A Type of transistor: N-MOSFET x2 Power dissipation: 4.5W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhancement Mounting: SMD Anzahl je Verpackung: 4000 Stücke |
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IRLHS6276TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET 2N-CH 20V 4.5A PQFN Packaging: Tape & Reel (TR) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active |
Produkt ist nicht verfügbar |
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IRLHS6276TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 20V; 12A; 4.5W; PQFN2X2 Case: PQFN2X2 Drain-source voltage: 20V Drain current: 12A Type of transistor: N-MOSFET x2 Power dissipation: 4.5W Polarisation: unipolar Kind of package: reel Features of semiconductor devices: logic level Technology: HEXFET® Kind of channel: enhancement Mounting: SMD |
Produkt ist nicht verfügbar |