IRLHS6276TRPBF Infineon Technologies
| Anzahl | Preis |
|---|---|
| 3+ | 1.29 EUR |
| 10+ | 0.8 EUR |
| 100+ | 0.51 EUR |
| 500+ | 0.39 EUR |
| 1000+ | 0.35 EUR |
| 2000+ | 0.32 EUR |
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Technische Details IRLHS6276TRPBF Infineon Technologies
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm, tariffCode: 85412900, rohsCompliant: YES, Dauer-Drainstrom Id, p-Kanal: 3.4A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: -, isCanonical: Y, Drain-Source-Spannung Vds, p-Kanal: 20V, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Dauer-Drainstrom Id, n-Kanal: 3.4A, Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm, Verlustleistung, p-Kanal: 6.6W, Drain-Source-Spannung Vds, n-Kanal: 20V, euEccn: NLR, Bauform - Transistor: DFN2020, Anzahl der Pins: 6Pin(s), Produktpalette: HEXFET Series, Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm, productTraceability: Yes-Date/Lot Code, Kanaltyp: n-Kanal, Verlustleistung, n-Kanal: 6.6W, Betriebstemperatur, max.: 150°C, SVHC: No SVHC (25-Jun-2025).
Weitere Produktangebote IRLHS6276TRPBF nach Preis ab 0.34 EUR bis 1.34 EUR
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IRLHS6276TRPBF | Infineon Technologies |
 Description: MOSFET 2N-CH 20V 4.5A PQFNPackaging: Cut Tape (CT) Package / Case: 6-PowerVDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.5W Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 4.5A Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.1V @ 10µA Supplier Device Package: 6-PQFN Dual (2x2) Part Status: Active |
auf Bestellung 2430 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLHS6276TRPBF | INFINEON |
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm tariffCode: 85412900 rohsCompliant: YES Dauer-Drainstrom Id, p-Kanal: 3.4A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - isCanonical: Y Drain-Source-Spannung Vds, p-Kanal: 20V MSL: MSL 1 - unbegrenzt usEccn: EAR99 Dauer-Drainstrom Id, n-Kanal: 3.4A Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm Verlustleistung, p-Kanal: 6.6W Drain-Source-Spannung Vds, n-Kanal: 20V euEccn: NLR Bauform - Transistor: DFN2020 Anzahl der Pins: 6Pin(s) Produktpalette: HEXFET Series Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Verlustleistung, n-Kanal: 6.6W Betriebstemperatur, max.: 150°C SVHC: No SVHC (25-Jun-2025) |
auf Bestellung 2730 Stücke: Lieferzeit 14-21 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRLHS6276TRPBF |
|
Hersteller: Infineon Technologies
Description: MOSFET 2N-CH 20V 4.5A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
Description: MOSFET 2N-CH 20V 4.5A PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.5W
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 4.5A
Input Capacitance (Ciss) (Max) @ Vds: 310pF @ 10V
Rds On (Max) @ Id, Vgs: 45mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 3.1nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN Dual (2x2)
Part Status: Active
auf Bestellung 2430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 14+ | 1.34 EUR |
| 22+ | 0.83 EUR |
| 100+ | 0.54 EUR |
| 500+ | 0.41 EUR |
| 1000+ | 0.37 EUR |
| 2000+ | 0.34 EUR |
| IRLHS6276TRPBF |
|
Hersteller: INFINEON
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3.4A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 6.6W
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: HEXFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 6.6W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
Description: INFINEON - IRLHS6276TRPBF - Dual-MOSFET, n-Kanal, 20 V, 20 V, 3.4 A, 3.4 A, 0.033 ohm
tariffCode: 85412900
rohsCompliant: YES
Dauer-Drainstrom Id, p-Kanal: 3.4A
hazardous: false
rohsPhthalatesCompliant: YES
Qualifikation: -
isCanonical: Y
Drain-Source-Spannung Vds, p-Kanal: 20V
MSL: MSL 1 - unbegrenzt
usEccn: EAR99
Dauer-Drainstrom Id, n-Kanal: 3.4A
Drain-Source-Durchgangswiderstand, p-Kanal: 0.033ohm
Verlustleistung, p-Kanal: 6.6W
Drain-Source-Spannung Vds, n-Kanal: 20V
euEccn: NLR
Bauform - Transistor: DFN2020
Anzahl der Pins: 6Pin(s)
Produktpalette: HEXFET Series
Drain-Source-Durchgangswiderstand, n-Kanal: 0.033ohm
productTraceability: Yes-Date/Lot Code
Kanaltyp: n-Kanal
Verlustleistung, n-Kanal: 6.6W
Betriebstemperatur, max.: 150°C
SVHC: No SVHC (25-Jun-2025)
auf Bestellung 2730 Stücke:
Lieferzeit 14-21 Tag (e)