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IRLHS6342TRPBF

IRLHS6342TRPBF Infineon Technologies

irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Tape & Reel (TR)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
auf Bestellung 124000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4000+0.32 EUR
Mindestbestellmenge: 4000
Im Einkaufswagen  Stück im Wert von  UAH
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Technische Details IRLHS6342TRPBF Infineon Technologies

Description: MOSFET N-CH 30V 8.7A/19A 6PQFN, Packaging: Tape & Reel (TR), Package / Case: 6-PowerVDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V, Power Dissipation (Max): 2.1W (Ta), Vgs(th) (Max) @ Id: 1.1V @ 10µA, Supplier Device Package: 6-PQFN (2x2), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V.

Weitere Produktangebote IRLHS6342TRPBF nach Preis ab 0.32 EUR bis 1.40 EUR

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IRLHS6342TRPBF IRLHS6342TRPBF Hersteller : Infineon Technologies irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Power Dissipation (Max): 2.1W (Ta)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Supplier Device Package: 6-PQFN (2x2)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
auf Bestellung 129316 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
31+0.58 EUR
100+0.41 EUR
500+0.34 EUR
1000+0.32 EUR
Mindestbestellmenge: 26
Im Einkaufswagen  Stück im Wert von  UAH
IRLHS6342TRPBF IRLHS6342TRPBF Hersteller : Infineon Technologies Infineon_IRLHS6342_DataSheet_v01_01_EN-3363422.pdf MOSFETs 30V 1 N-CH HEXFET 15.5mOhms 11nC
auf Bestellung 6235 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+1.40 EUR
10+0.90 EUR
100+0.59 EUR
500+0.46 EUR
1000+0.42 EUR
2000+0.40 EUR
4000+0.34 EUR
Mindestbestellmenge: 3
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IRLHS6342TRPBF IRLHS6342TRPBF Hersteller : Infineon Technologies infineon-irlhs6342-datasheet-v01_01-en.pdf Trans MOSFET N-CH 30V 8.7A 6-Pin PQFN EP T/R
auf Bestellung 4000 Stücke:
Lieferzeit 14-21 Tag (e)
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IRLHS6342TRPBF Hersteller : Infineon irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)
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IRLHS6342TRPBF Hersteller : INFINEON TECHNOLOGIES irlhs6342pbf.pdf?fileId=5546d462533600a401535663b52625ad IRLHS6342TRPBF SMD N channel transistors
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