IRLHS6342TRPBF Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
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Technische Details IRLHS6342TRPBF Infineon Technologies
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN, Power Dissipation (Max): 2.1W (Ta), Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: 6-PowerVDFN, Packaging: Tape & Reel (TR), Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±12V, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Part Status: Not For New Designs, Supplier Device Package: 6-PQFN (2x2), Vgs(th) (Max) @ Id: 1.1V @ 10µA.
Weitere Produktangebote IRLHS6342TRPBF nach Preis ab 0.32 EUR bis 1.4 EUR
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IRLHS6342TRPBF | Infineon Technologies |
Description: MOSFET N-CH 30V 8.7A/19A 6PQFNInput Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Part Status: Not For New Designs Supplier Device Package: 6-PQFN (2x2) Vgs(th) (Max) @ Id: 1.1V @ 10µA Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 129316 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLHS6342TRPBF | Infineon Technologies |
MOSFETs 30V 1 N-CH HEXFET 15.5mOhms 11nC |
auf Bestellung 6235 Stücke: Lieferzeit 10-14 Tag (e) |
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| IRLHS6342TRPBF | Infineon |
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auf Bestellung 400000 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| IRLHS6342TRPBF |
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Hersteller: Infineon Technologies
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 8.7A/19A 6PQFN
Input Capacitance (Ciss) (Max) @ Vds: 1019 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: 6-PQFN (2x2)
Vgs(th) (Max) @ Id: 1.1V @ 10µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 15.5mOhm @ 8.5A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 8.7A (Ta), 19A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 129316 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 26+ | 0.69 EUR |
| 31+ | 0.58 EUR |
| 100+ | 0.41 EUR |
| 500+ | 0.34 EUR |
| 1000+ | 0.32 EUR |
| IRLHS6342TRPBF |
![]() |
Hersteller: Infineon Technologies
MOSFETs 30V 1 N-CH HEXFET 15.5mOhms 11nC
MOSFETs 30V 1 N-CH HEXFET 15.5mOhms 11nC
auf Bestellung 6235 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 1.4 EUR |
| 10+ | 0.9 EUR |
| 100+ | 0.59 EUR |
| 500+ | 0.46 EUR |
| 1000+ | 0.42 EUR |
| 2000+ | 0.4 EUR |
| 4000+ | 0.34 EUR |
| IRLHS6342TRPBF |
![]() |
Hersteller: Infineon
auf Bestellung 400000 Stücke:
Lieferzeit 21-28 Tag (e)


