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IRLI520NPBF

IRLI520NPBF Infineon / IR


Infineon-IRLI520N-DS-v01_02-EN-1732048.pdf
Hersteller: Infineon / IR
MOSFET MOSFT 100V 7.7A 180mOhm 13.3nC LogLv
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Technische Details IRLI520NPBF Infineon / IR

Description: MOSFET N-CH 100V 8.1A TO220AB FP, Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V, Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 30W (Tc).

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IRLI520NPBF International Rectifier irli520npbf.pdf?fileId=5546d462533600a401535663ef6625bd TO220-ISO Транзистори
Produkt ist nicht verfügbar
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IRLI520NPBF IRLI520NPBF Infineon Technologies irli520npbf.pdf?fileId=5546d462533600a401535663ef6625bd Description: MOSFET N-CH 100V 8.1A TO220AB FP
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLI520NPBF irli520npbf.pdf?fileId=5546d462533600a401535663ef6625bd
Hersteller: International Rectifier
TO220-ISO Транзистори
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
IRLI520NPBF irli520npbf.pdf?fileId=5546d462533600a401535663ef6625bd
IRLI520NPBF
Hersteller: Infineon Technologies
Description: MOSFET N-CH 100V 8.1A TO220AB FP
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.1A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 5 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 30W (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH