IRLIB9343 Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET P-CH 55V 14A TO220AB FP
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Drain to Source Voltage (Vdss): 55 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: TO-220AB Full-Pak
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 33W (Tc)
Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -40°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
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Technische Details IRLIB9343 Infineon Technologies
Description: MOSFET P-CH 55V 14A TO220AB FP, Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 50 V, Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V, Drain to Source Voltage (Vdss): 55 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Supplier Device Package: TO-220AB Full-Pak, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 33W (Tc), Rds On (Max) @ Id, Vgs: 105mOhm @ 3.4A, 10V, Current - Continuous Drain (Id) @ 25°C: 14A (Tc), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -40°C ~ 175°C (TJ), Mounting Type: Through Hole, Package / Case: TO-220-3 Full Pack, Packaging: Tube.

