IRLIZ34N Infineon Technologies
Hersteller: Infineon Technologies
Description: MOSFET N-CH 55V 22A TO220AB FP
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Part Status: Obsolete
Supplier Device Package: PG-TO220-FP
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 37W (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V
Drain to Source Voltage (Vdss): 55 V
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Technische Details IRLIZ34N Infineon Technologies
Description: MOSFET N-CH 55V 22A TO220AB FP, Package / Case: TO-220-3 Full Pack, Packaging: Tube, Vgs (Max): ±16V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Part Status: Obsolete, Supplier Device Package: PG-TO220-FP, Vgs(th) (Max) @ Id: 2V @ 250µA, Power Dissipation (Max): 37W (Tc), Rds On (Max) @ Id, Vgs: 35mOhm @ 12A, 10V, Current - Continuous Drain (Id) @ 25°C: 22A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Through Hole, Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 5 V, Drain to Source Voltage (Vdss): 55 V.

