IRLL110TRPBF-BE3 Vishay Siliconix
Hersteller: Vishay SiliconixDescription: MOSFET N-CH 100V 1.5A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc)
Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V
Power Dissipation (Max): 2W (Ta), 3.1W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
Vgs (Max): ±10V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.01 EUR |
Produktrezensionen
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Technische Details IRLL110TRPBF-BE3 Vishay Siliconix
Description: MOSFET N-CH 100V 1.5A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc), Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V, Power Dissipation (Max): 2W (Ta), 3.1W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: SOT-223, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4V, 5V, Vgs (Max): ±10V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V.
Weitere Produktangebote IRLL110TRPBF-BE3 nach Preis ab 0.52 EUR bis 1.52 EUR
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IRLL110TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 135000 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL110TRPBF-BE3 | Hersteller : Vishay Siliconix |
Description: MOSFET N-CH 100V 1.5A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Tc) Rds On (Max) @ Id, Vgs: 540mOhm @ 900mA, 5V Power Dissipation (Max): 2W (Ta), 3.1W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4V, 5V Vgs (Max): ±10V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6.1 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 250 pF @ 25 V |
auf Bestellung 5118 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL110TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1886 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL110TRPBF-BE3 | Hersteller : Vishay / Siliconix |
MOSFETs SOT223 100V 1.5A N-CH MOSFET |
auf Bestellung 106253 Stücke: Lieferzeit 10-14 Tag (e) |
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IRLL110TRPBF-BE3 | Hersteller : VISHAY |
Description: VISHAY - IRLL110TRPBF-BE3 - MOSFET, N-CH, 100V, 1.5A, SOT-223 tariffCode: 85412900 Transistormontage: Surface Mount Drain-Source-Spannung Vds: 100V rohsCompliant: YES Dauer-Drainstrom Id: 1.5A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: - usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 3.1W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: N Channel Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.54ohm directShipCharge: 25 |
auf Bestellung 1886 Stücke: Lieferzeit 14-21 Tag (e) |
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IRLL110TRPBF-BE3 | Hersteller : Vishay |
Trans MOSFET N-CH 100V 1.5A 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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| IRLL110TRPBF-BE3 | Hersteller : Vishay |
Power MOSFET Surface Mount |
Produkt ist nicht verfügbar |