IRLL3303PBF Infineon Technologies
Hersteller: Infineon TechnologiesDescription: MOSFET N-CH 30V 4.6A SOT223
Packaging: Tube
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta)
Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V
Power Dissipation (Max): 1W (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-223
Part Status: Discontinued at Digi-Key
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V
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Technische Details IRLL3303PBF Infineon Technologies
Description: MOSFET N-CH 30V 4.6A SOT223, Packaging: Tube, Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.6A (Ta), Rds On (Max) @ Id, Vgs: 31mOhm @ 4.6A, 10V, Power Dissipation (Max): 1W (Ta), Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-223, Part Status: Discontinued at Digi-Key, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±16V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 840 pF @ 25 V.
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| Foto | Bezeichnung | Hersteller | Beschreibung |
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Preis |
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IRLL3303PBF | Hersteller : Infineon Technologies |
MOSFET 30V 1 N-CH HEXFET 31mOhms 34nC |
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