auf Bestellung 5077 Stücke:
Lieferzeit 14-28 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 31+ | 1.69 EUR |
| 36+ | 1.46 EUR |
| 100+ | 1.09 EUR |
| 500+ | 0.85 EUR |
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Technische Details IRLMS1902TRPBF Infineon / IR
Description: MOSFET N-CH 20V 3.2A MICRO6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 4.5V, Power Dissipation (Max): 1.7W (Ta), Vgs(th) (Max) @ Id: 700mV @ 250µA (Min), Supplier Device Package: Micro6™(TSOP-6), Part Status: Obsolete, Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 15 V.
Weitere Produktangebote IRLMS1902TRPBF
| Foto | Bezeichnung | Hersteller | Beschreibung |
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IRLMS1902TRPBF | Hersteller : Infineon Technologies |
 Trans MOSFET N-CH Si 20V 3.2A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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IRLMS1902TRPBF | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 3.2A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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IRLMS1902TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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IRLMS1902TRPBF | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 3.2A MICRO6 Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 100mOhm @ 2.2A, 4.5V Power Dissipation (Max): 1.7W (Ta) Vgs(th) (Max) @ Id: 700mV @ 250µA (Min) Supplier Device Package: Micro6™(TSOP-6) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 2.7V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 300 pF @ 15 V |
Produkt ist nicht verfügbar |
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IRLMS1902TRPBF | Hersteller : INFINEON TECHNOLOGIES |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 3.2A; 1.7W; TSOP6 Type of transistor: N-MOSFET Technology: HEXFET® Polarisation: unipolar Drain-source voltage: 20V Drain current: 3.2A Power dissipation: 1.7W Case: TSOP6 Mounting: SMD Kind of package: reel Kind of channel: enhanced Features of semiconductor devices: logic level |
Produkt ist nicht verfügbar |