Technische Details IRLMS2002TR IR
Description: MOSFET N-CH 20V 6.5A 6-TSOP, Packaging: Cut Tape (CT), Package / Case: SOT-23-6, Mounting Type: Surface Mount, Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: Micro6™(SOT23-6), Part Status: Obsolete, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V, Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V.
Weitere Produktangebote IRLMS2002TR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
| IRLMS2002TR | Hersteller : IR |
 04+ |
auf Bestellung 9265 Stücke: Lieferzeit 21-28 Tag (e) |
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IRLMS2002TR | Hersteller : Infineon Technologies |
Trans MOSFET N-CH Si 20V 6.5A 6-Pin TSOP T/R |
Produkt ist nicht verfügbar |
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IRLMS2002TR | Hersteller : Infineon Technologies |
Description: MOSFET N-CH 20V 6.5A 6-TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta) Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: Micro6™(SOT23-6) Part Status: Obsolete Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1310 pF @ 15 V |
Produkt ist nicht verfügbar |